A project to create a new type of information storage device based on fast iRAM chips. The device is characterized by high access speed, increased reliability, almost unlimited read/write resource within the service life.

The project realization requires initial investments at the stage of development, with the possibility of attracting additional investments at the stages of production and marketing, according to the business plan.

You can contact the author and discuss the terms of cooperation through the "Contacts" section.

More detailed technical and functional description can be found in the "Technology" section.

The special feature of this technology is the use of high-speed static memory with ultra-low power consumption in the state of data storage, as well as an ultra-long-life rechargeable battery for long-term data storage in the absence of external power.

This technology allows you to:

• Perform data read/write operations at the maximum speeds of common computer interfaces. Maximum read/write speeds up to 100 GB/s and higher on select instances;
• Perform functions of fast information backup, fast formatting, instant destruction or protection of critical information;
• Ensure a high level of integrity and security of critical information;
• Maximize the probability of information recovery in the event of a device failure;
• Increase the service life up to 20 years and more;
• Reduce power consumption;
• Increase mechanical strength and resistance to power supply voltage fluctuations;
• Extend the operating temperature range of individual instances up to the values used in the industrial range.

The block diagram of this technology is shown below:

 

The technology is copyrighted and protected by certificate of deposit #2213846 dated 2023/11/26, additional information:

RID: iRAM DRIVE

Type: Patent application material

Date of creation: November 25, 2023 23:31

Status: Protected

RID Files: iram drive.pdf

Certificate: #2213846

 

Page is not found!